There are minimal bike lanes and the terrain is flat as a pancake.
This talk will examine the evolutionary path of optical lithography without EUV.
We explore the previous history to understand the various solutions that have emerged. We will examine the possible limits and fundamental problems moving into the sub-10nm node regime.
Optical lithography may still be needed for all layers, in combination with NGL for relevant layers, or not at all.
The consideration will be based on necessary requirements such as overlay accuracy, resolution, and defects.
As an example application, we will report extractions of maximum electric field at M1 tipto- tip which is one of the most critical patterning locations and we will demonstrate the potential of this approach for investigating the impact of process variations on dielectric reliability.
We will also present simulations of an alternative M1 patterning flow, with a single exposure block using extreme ultraviolet lithography (EUVL) and analyze its advantages compared to the LE Double-patterning Ar F immersion lithography continues to advance the patterning resolution and overlay requirements and has enabled the continuation of semiconductor bit-scaling.
The goal from the light source manufacturer is to further enable capability and reduce variation through a number of parameters.
Recent improvements in bandwidth control have been realized in the XLR platform with Cymer’s Dyna Pulse control technology.
Over the years Lithography Engineers continue to focus on CD control, overlay and process capability to meet current node requirements for yield and device performance.